Izixhobo ezibalulekileyo zeendlela zokuhlaziya i-microanalysis ziquka: i-microscope ebonakalayo (i-OM), i-double-beam scanning electron microscopy (DB-FIB), i-electron microscopy (SEM), kunye ne-electron microscopy yokudluliselwa (TEM).Inqaku lanamhlanje liza kwazisa umthetho-siseko kunye nokusetyenziswa kwe-DB-FIB, kugxininise kwisakhono senkonzo kanomathotholo nomabonakude metrology DB-FIB kunye nokusetyenziswa kwe-DB-FIB kuhlalutyo lwe-semiconductor.
Yintoni i-DB-FIB
I-electron-beam scanning electron microscope (DB-FIB) sisixhobo esidibanisa umqa we-ion ogxininisiweyo kunye ne-electron beam yokuskena kwi-microscope enye, kwaye ixhotyiswe ngezixhobo ezifana nenkqubo yokutofa kwegesi (GIS) kunye ne-nanomanipulator, ukuze kuphunyezwe imisebenzi emininzi. ezifana ne-etching, i-deposition material, i-micro kunye ne-nano processing.
Phakathi kwabo, i-ion beam (FIB) igxininise isantya se-ion eveliswa yi-liquid gallium metal (Ga) umthombo we-ion, emva koko igxininise kumphezulu wesampuli ukuvelisa izibonakaliso ze-electron yesibini, kwaye iqokelelwa ngumtshini.Okanye sebenzisa i-ion beam yangoku eyomeleleyo ukuze udibanise umphezulu wesampulu ye-micro kunye ne-nano processing;Indibaniselwano ye-sputtering ebonakalayo kunye neekhemikhali eziphendulayo zegesi nazo zinokusetyenziselwa ukukhetha okanye ukubeka iintsimbi kunye nezithinteli.
Imisebenzi ephambili kunye nokusetyenziswa kwe-DB-FIB
Imisebenzi ephambili: ukusetyenzwa kwendawo enqamlezileyo, ukulungiswa kwesampulu ye-TEM, i-etching ekhethiweyo okanye eyomeleziweyo, ukubekwa kwezinto zetsimbi kunye nokubekwa kwe-insulating layer.
Intsimi yesicelo: I-DB-FIB isetyenziswa ngokubanzi kwizinto ze-ceramic, iipholima, izinto zetsimbi, ibhayoloji, i-semiconductor, i-geology kunye nezinye iinkalo zophando kunye novavanyo lwemveliso ehambelanayo.Ngokukodwa, isampulu ye-DB-FIB ekhethekileyo yothumelo lwesampulu yesampulu esisigxina yenza ukuba ingabinako ukuphinda ithathelwe indawo kwisakhono sohlalutyo lokusilela kwesemiconductor.
GRGTEST DB-FIB inkonzo yesakhono
I-DB-FIB okwangoku ixhotyiswe yi-Shanghai IC Test and Analysis Laboratory yi-Helios G5 series ye-Thermo Field, eyona nto iphambili ye-Ga-FIB series kwimarike.Uluhlu lunokufikelela kwizisombululo zokujonga i-electron beam imaging ngaphantsi kwe-1 nm, kwaye iphuculwe ngakumbi ngokwemigaqo ye-ion beam yokusebenza kunye ne-automation kunesizukulwana sangaphambili se-electron-beam microscopy.I-DB-FIB ixhotyiswe ngama-nanomanipulators, iinkqubo ze-injection yegesi (GIS) kunye ne-EDX ye-spectrum yamandla ukuhlangabezana neemfuno ezisisiseko kunye neziphambili zokuhlalutya ukungaphumeleli kwe-semiconductor.
Njengesixhobo esinamandla sohlalutyo lokusilela kwepropathi ye-semiconductor, i-DB-FIB inokwenza i-fixed-point cross-section machining ngokuchaneka kwe-nanometer.Ngexesha elifanayo lokucutshungulwa kwe-FIB, i-electron beam yokuskena enesisombululo se-nanometer ingasetyenziselwa ukujonga i-microscopic morphology ye-cross-section kunye nokuhlalutya ukubunjwa ngexesha langempela.Ukufezekisa ukufakwa kwezinto ezahlukeneyo zetsimbi (i-tungsten, i-platinum, njl.) kunye nezixhobo ezingezizo zetsimbi (carbon, SiO2);I-TEM i-ultra-thin slices nayo inokulungiswa kwindawo emiselweyo, enokuthi ihlangabezane neemfuno zokuqwalaselwa kwe-ultra-high resolution kwinqanaba le-athomu.
Siza kuqhubeka notyalo-mali kwizixhobo zohlalutyo lwe-elektroniki oluphambili, siphucula ngokuqhubekayo kwaye sandise ukusilela okunxulumene nohlalutyo lwe-semiconductor, kunye nokubonelela abathengi ngezisombululo ezineenkcukacha nezipheleleyo zokusilela.
Ixesha lokuposa: Apr-14-2024